In a groundbreaking development, Chinese scientists have successfully created an ultra-thin semiconductor material that holds the potential for producing faster and more energy-efficient microchips. This innovative feat, achieved by a team led by Liu Kaihui, Liu Can, and Zhang Guangyu, marks a significant progression in semiconductor technology.
The Breakthrough
The research team, consisting of experts from Peking University, Renmin University, and the Institute of Physics at the Chinese Academy of Sciences, devised a fabrication method to produce a semiconductor material merely 0.7 nanometres thick. Their findings were recently published in the esteemed journal Science, shedding light on a critical impediment in the miniaturization of conventional silicon-based chips.
Transition to 2D Materials
The scientists delved into two-dimensional (2D) transition-metal dichalcogenides (TMDs) as a viable alternative to silicon. With a thickness of only 0.7 nanometres, TMDs exhibit lower power consumption and superior electron transport properties, making them ideal candidates for the ultra-scaled transistors expected in future electronic and photonic chips.
The traditional fabrication process posed challenges in producing TMDs due to issues with crystal purity and structural integrity. However, the team’s innovative technique enables the rapid production of high-quality 2D crystals in multiple formulations, paving the way for mass production.
Revolutionary Fabrication Method
Liu Kaihui explained that the conventional layer-by-layer assembly approach often led to crystals with impurities and defects due to uncontrollable atomic arrangements. To overcome this, the team pioneered the “grow at interface” method, where subsequent atoms are added between the substrate and the initial crystal layer, ensuring precise structural control and preventing the accumulation of defects.
High-Quality 2D Crystals
The research showcased impressive results, achieving a crystal layer formation rate of 50 layers per minute, with a maximum of 15,000 layers. Peking University highlighted the impeccable parallel atomic arrangement and control in each layer, underscoring the significance of their high-quality 2D crystals.
The team successfully produced a variety of TMDs, including molybdenum disulfide, molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide. These materials meet international standards for integrated circuit materials, with exceptional electron mobility and frequency conversion capabilities.
Implications for Chip Integration
Utilizing these advanced 2D crystals in transistors for integrated circuits can significantly enhance chip integration. By increasing the transistor density on a chip the size of a fingernail, the computing power can be substantially enhanced, ushering in a new era of technological advancement.
For the full article and more details, visit the Scientific Journal.